Datasheet > BLF7G21LS-160P,112

BLF7G21LS-160P,112

更新时间： 2024-11-23 14:41:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	134K
描述
BLF7G21LS-160P

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BLF7G21LS-160P,112 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFM
针数：	4	Reach Compliance Code：	compliant
风险等级：	5.7	Is Samacsys：	N
Base Number Matches：	1

BLF7G21LS-160P,112 数据手册

浏览型号BLF7G21LS-160P,112的Datasheet PDF文件第2页

浏览型号BLF7G21LS-160P,112的Datasheet PDF文件第3页

浏览型号BLF7G21LS-160P,112的Datasheet PDF文件第4页

浏览型号BLF7G21LS-160P,112的Datasheet PDF文件第5页

浏览型号BLF7G21LS-160P,112的Datasheet PDF文件第6页

浏览型号BLF7G21LS-160P,112的Datasheet PDF文件第7页

BLF7G21L-160P;

BLF7G21LS-160P

Power LDMOS transistor

Rev. 2 — 13 October 2011

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2050 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Mode of operation

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%)

ACPR

(dBc)

30^[1]

34^[2]

(MHz)

(mA)

1080

(dB)

2-carrier W-CDMA

1-carrier W-CDMA

1930 to 1990

18.0

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low R_thproviding excellent thermal stability

 Designed for broadband operation (1800 MHz to 2050 MHz)

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to

2050 MHz frequency range

12 3 4 5 6 7...15

中文翻译

下载PDF

与BLF7G21LS-160P,112相关器件

型号	品牌	获取价格	描述	数据表
BLF7G21LS-160P,118	NXP	获取价格	BLF7G21LS-160P
BLF7G22L(S)-100P	NXP	获取价格	RF Manual 16th edition
BLF7G22L(S)-130	NXP	获取价格	RF Manual 16th edition
BLF7G22L(S)-160	NXP	获取价格	RF Manual 16th edition
BLF7G22L(S)-200	NXP	获取价格	RF Manual 16th edition
BLF7G22L(S)-250P	NXP	获取价格	RF Manual 16th edition
BLF7G22L-130	NXP	获取价格	Power LDMOS transistor
BLF7G22L-130,112	NXP	获取价格	BLF7G22L-130
BLF7G22L-130,118	NXP	获取价格	BLF7G22L-130
BLF7G22L-130N	NXP	获取价格	Power LDMOS transistor