Datasheet > BLF6G27LS-75,118

BLF6G27LS-75,118

更新时间： 2024-11-23 20:04:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	98K
描述
WiMAX power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13"

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BLF6G27LS-75,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否无铅：	含铅
是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

BLF6G27LS-75,118 数据手册

BLF6G27-75; BLF6G27LS-75

WiMAX power LDMOS transistor

Rev. 01 — 22 October 2009

Product data sheet

1. Product proﬁle

1.1 General description

75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz

to 2700 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 °C in a class-AB production test circuit.

Mode of operation

V_DSP_L(AV)P_L(M)G_p

(V) (W)

η_DACPR_885kACPR_1980k

(MHz)

(W) (dB) (%) (dBc)

75 17

23 −50^[2]

(dBc)

−60^[2]

1-carrier N-CDMA^[1]

2500 to 2700 28

[1] Single carrier IS-95 with pilot, paging, sync and 6 trafﬁc channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

[2] Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync

and 6 trafﬁc channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the

CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and

2700 MHz, a supply voltage of 28 V and an I_Dqof 600 mA:

N Average output power = 9 W

N Power gain = 17 dB

N Drain efﬁciency = 23 %

N ACPR₈₈₅= −50.0 dBc in 30 kHz bandwidth

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (2500 MHz to 2700 MHz)

I Internally matched for ease of use

12 3 4 5 6 7...14

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