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BLF6G38-25,112 PDF预览

BLF6G38-25,112

更新时间: 2024-11-19 14:48:55
品牌 Logo 应用领域
恩智浦 - NXP 局域网放大器晶体管
页数 文件大小 规格书
13页 87K
描述
BLF6G38-25

BLF6G38-25,112 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFM包装说明:ROHS COMPLIANT, CERAMIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:8.65外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (Abs) (ID):8.2 A最大漏极电流 (ID):8.2 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:S BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLF6G38-25,112 数据手册

 浏览型号BLF6G38-25,112的Datasheet PDF文件第2页浏览型号BLF6G38-25,112的Datasheet PDF文件第3页浏览型号BLF6G38-25,112的Datasheet PDF文件第4页浏览型号BLF6G38-25,112的Datasheet PDF文件第5页浏览型号BLF6G38-25,112的Datasheet PDF文件第6页浏览型号BLF6G38-25,112的Datasheet PDF文件第7页 
BLF6G38-25; BLF6G38S-25  
WiMAX power LDMOS transistor  
Rev. 02 — 23 December 2008  
Product data sheet  
1. Product profile  
1.1 General description  
25 W LDMOS power transistor for base station applications at frequencies from  
3400 MHz to 3800 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.  
Mode of operation  
f
VDS PL(AV) Gp  
ηD  
ACPR885k ACPR1980k  
(MHz)  
(V)  
(W)  
(dB)  
(%)  
24  
(dBc)  
45[2]  
(dBc)  
61[2]  
1-carrier N-CDMA[1]  
3400 to 3600  
28  
4.5  
15  
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at  
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.  
[2] Measured within 30 kHz bandwidth.  
1.2 Features  
I Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync  
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the  
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz  
and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:  
N Average output power = 4.5 W  
N Power gain = 15 dB  
N Drain efficiency = 24 %  
N ACPR885k = 45 dBc in 30 kHz bandwidth  
I Easy power control  
I Integrated ESD protection  
I Excellent ruggedness  
I High efficiency  
I Excellent thermal stability  
I Designed for broadband operation (3400 MHz to 3800 MHz)  
I Internally matched for ease of use  
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
I RF power amplifiers for base stations and multicarrier applications in the  
3400 MHz to 3800 MHz frequency range  
 
 
 
 
 
 

BLF6G38-25,112 替代型号

型号 品牌 替代类型 描述 数据表
BLF6G38-25 NXP

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