Datasheet > BLF6G38-10G,112

BLF6G38-10G,112

更新时间： 2024-11-19 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
16页	1425K
描述
RF FET LDMOS 65V 14DB SOT975C

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BLF6G38-10G,112 数据手册

BLF6G38-10; BLF6G38-10G

WiMAX power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

10 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3600 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 C in a class-AB production test circuit.

Mode of operation

V_DSP_L(AV)G_p

_DACPR_885k

(dB) (%) (dBc)

20 49^[2]

ACPR_1980k

(dBc)

64^[2]

(MHz)

(V)

(W)

1-carrier N-CDMA^[1]

3400 to 3600

[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.

[2] Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling. You must use a ground strap or touch the PC case or other

grounded source before unpacking or handling the hardware.

1.2 Features and benefits

 Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on

CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and

an I_Dqof 130 mA:

 Qualified up to a maximum V_DSoperation of 32 V

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 Internally matched for ease of use

 Low gold plating thickness on leads

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...16

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