Datasheet > BLF6G38-10G/T3

BLF6G38-10G/T3

更新时间： 2024-11-20 03:55:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	103K
描述
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,3.1A I(D),SOT-975C

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BLF6G38-10G/T3 数据手册

BLF6G38-10; BLF6G38-10G

WiMAX power LDMOS transistor

Rev. 01 — 3 February 2009

Product data sheet

1. Product proﬁle

1.1 General description

10 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3600 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 °C in a class-AB production test circuit.

Mode of operation

V_DSP_L(AV)G_p

η_DACPR_885k

(dB) (%) (dBc)

20 −49^[2]

ACPR_1980k

(dBc)

−64^[2]

(MHz)

(V)

(W)

1-carrier N-CDMA^[1]

3400 to 3600

[1] Single carrier N-CDMA with pilot, paging sync and 6 trafﬁc channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.

[2] Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 trafﬁc channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on

CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and

an I_Dqof 130 mA:

I Qualiﬁed up to a maximum V_DSoperation of 32 V

I Integrated ESD protection

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation

I Internally matched for ease of use

I Low gold plating thickness on leads

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...15

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