Datasheet > BLF2425M7LS250P:11

BLF2425M7LS250P:11

更新时间： 2024-11-25 22:07:43

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其他 - ETC		/
页数	文件大小	规格书
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描述
RF FET LDMOS 65V 15DB SOT539B

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BLF2425M7L250P;

BLF2425M7LS250P

Power LDMOS transistor

Rev. 5 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW

applications and are assembled in high performance ceramic packages, available in

eared and earless versions

Table 1.

Typical performance

RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

(dB)

(%)

250

1.2 Features and benefits

 High efficiency

 Easy power control

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (2400 MHz to 2500 MHz)

 Internally matched

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency

range such as ISM and industrial heating.

12 3 4 5 6 7...11

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