Datasheet > BLF2425M6LS180P,11

BLF2425M6LS180P,11

更新时间： 2024-11-25 22:07:43

品牌	Logo	应用领域
其他 - ETC		放大器晶体管
页数	文件大小	规格书
12页	1084K
描述
RF FET LDMOS 65V 13.3DB SOT539B

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BLF2425M6L180P;

BLF2425M6LS180P

Power LDMOS transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

180 W LDMOS power transistor for various applications such as ISM and industrial

heating at frequencies from 2400 MHz to 2500 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

(mA)

(dB)

13.3

(%)

53.5

180

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (2400 MHz to 2500 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency

range such as ISM and industrial heating.

12 3 4 5 6 7...12

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