Datasheet > BLF2425M7LS100J

BLF2425M7LS100J

更新时间： 2024-11-25 22:07:43

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RF FET LDMOS 65V 18DB SOT502B

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BLF2425M7LS100J 数据手册

BLF2425M7L100;

BLF2425M7LS100

Power LDMOS transistor

Rev. 2 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz

to 2400 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

I_Dq

V_DS

P_L(AV)

(W)

G_p

_D

ACPR_885kACPR_5M

(MHz)

(mA) (V)

(dB)

(%) (dBc)

(dBc)

IS-95

2300 to 2400 900

46^[1]

1 carrier W-CDMA 2300 to 2400 900

18.7

40^[2]

[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is

3.84 MHz.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low R_thproviding excellent thermal stability

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to

2400 MHz frequency range

12 3 4 5 6 7...13

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