Datasheet > BLF2425M7L140

BLF2425M7L140

更新时间： 2024-11-25 12:52:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
11页	299K
描述
Power LDMOS transistor

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BLF2425M7L140 数据手册

BLF2425M7L140;

BLF2425M7LS140

Power LDMOS transistor

Rev. 3 — 6 September 2012

Product data sheet

1. Product profile

1.1 General description

140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW

applications and are assembled in high performance ceramic packages, available in

eared and earless versions

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; I_Dq= 1300 mA in a common source class-AB production

test circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

(dB)

18.5

(%)

140

1.2 Features and benefits

 High efficiency

 High power gain

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (2400 MHz to 2500 MHz)

 Internally matched

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications in the frequency range from 2400 MHz to

2500 MHz

12 3 4 5 6 7...11

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BLF2425M7LS140,112	ETC	获取价格	RF FET LDMOS 65V 18.5DB SOT502B
BLF2425M7LS140,118	ETC	获取价格	RF FET LDMOS 65V 18.5DB SOT502B
BLF2425M7LS250P,11	ETC	获取价格	RF FET LDMOS 65V 15DB SOT539B