Datasheet > BLD123D

BLD123D

更新时间： 2024-09-16 00:04:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	157K
描述
BLD SERIES TRANSISTORS

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中文翻译

获取价格

数据手册

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BLD123D 数据手册

Shenzhen SI Semiconductors Co., LTD.

Product Specification

BUL SERIES TRANSISTORS

BUL123D

FEATURES

HIGH VOLTAGE CAPABILITY

ELECTRONIC BALLAST

HIGH SPEED SWITCHING

FLUORESCENT LAMP

WIDE SOA

APPLICATIONS:

Absolute Maximum Ratings Tc=25°C

TO-126

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

600

400

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

P_C

°C

150

-65-150

Tstg

Electrical Characteristics Tc=25°C

CHARACTERISTIC

SYMBOL

TEST CONDITION

V_CB=600V

MIN

MAX

UNIT

Collector-Cutoff Current

I_CBO

Collector-Cutoff Current

I_CEO

V_CE=400V,I_B=0

I_C=10mA,I_B=0

Collector-Emitter Sustaining Voltage

Emitter-Base Sustaining Voltage

V_CEO

400

V_EBO

I_E=1mA,I_C=0

I_C=0.2A,I_B=0.02A

I_C=0.5A,I_B=0.1A

I_C=1.5A,I_B=0.5A

Ic=0.5A,Ib=0.1A

V_CE=5V,I_C=1mA

V_CE=10V,I_C=0.2A

V_CE=5V,I_C=1.5A

0.30

0.35

0.85

1.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Vcesat

Vbesat

h_FE

V_CC=5V,

Storage Time

t_S

I_C=0.25A

(UI9600)

I_R=1.5A,

2.0

4.0

2.0

Base-Emitter Forward Voltage

V_F

Si semiconductors 2005.12

12 3

中文翻译

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