Datasheet > BLD128DFP

BLD128DFP

更新时间： 2024-09-16 00:04:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	154K
描述
BLD SERIES TRANSISTORS

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中文翻译

获取价格

数据手册

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BLD128DFP 数据手册

Shenzhen SI Semiconductors Co., LTD.

Product Specification

BLD SERIES TRANSISTORS

BLD128DFP

FEATURES

HIGH VOLTAGE CAPABILITY

FLUORESCENT LAMP

HIGH SPEED SWITCHING

ELECTRONIC BALLAST

WIDE SOA

APPLICATION:

ELECTRONIC TRANSFORMER

SWITCH MODE POWER SUPPLY

Absolute Maximum Ratings Tc=25°C

TO-220FP

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V_CBO

700

Collector-Emitter Voltage

Emitter- Base Voltage

V_CEO

V_EBO

400

Collector Current

I_C

5.0

Total Power Dissipation

P_C

Junction Temperature

Storage Temperature

150

°C

TO-220FP

Tstg

-65-150

Electronic Characteristics Tc=25°C

CHARACTERISTICS

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Collector-Emitter Voltage

Emitter -Base Voltage

SYMBOL

TEST CONDITION

V_CB=700V

MIN

MAX

100

UNIT

I_CBO

I_CEO

V_CE=400V,I_B=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

I_C=1.0A,I_B=0.2A

I_C=4.0A,I_B=1.0A

I_C=1.0A,I_B=0.2A

V_CE=5V,I_C=10mA

V_CE=5V,I_C=1.0A

V_CE=5V,I_C=4.0A

V_CC=5V,

250

V_CEO

400

V_EBO

0.5

1.5

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Vcesat

Vbesat

DC Current Gain

h_FE

Storage Time

Falling Time

t_S

t_f

1.5

4.0

0.8

2.5

I_C=0.5A

(UI9600)

µs

Diode Forward Voltage

I_C=2.0A

Si semiconductors 2005.12

12 3

中文翻译

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