Datasheet > BL4435A-S8

BL4435A-S8

更新时间： 2024-04-09 19:01:22

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	686K
描述
8.2A, 30V, 3.1W, P Channel, Power MOSFETs

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BL4435A-S8 数据手册

P-Channel Enhancement Mode MOSFET

BL4435A-S8

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= -250μA

V_DS= -30V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

-30

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

-1

μA

±100

On Characteristics

R_DS(ON)

Drain-Source On-resistance ^*2

V_GS= -10V,I_D= -9.1A

V_GS= -4.5V,I_D= -6.9A

V_DS= V_GS, I_D= -250μA

-3

mΩ

V_GS(th)

Gate Threshold Voltage

-1

-1.5

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

916

112

101

V_GS= 0V

Output Capacitance

V_DS= -15V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time ^*4

Turn-on Rise Time ^*4

Turn-Off Delay Time ^*4

Turn-Off Fall Time ^*4

Total Gate-Charge

V_DD= -15V, V_GS= -10V

R_G= 6Ω, I_D= -1A

110

Q_G

V_DD= -15V

V_GS= -10V

I_D= -4A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

2.6

3.3

Source-Drain Diode Characteristics

V_SD

Diode Forward Voltage ^*2

Notes:

I_SD= -2.1A, V_GS= 0V

-0.8

-1.2

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper

2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3. The E_ASdata shows Max. rating. The test condition is VDD = -15V, VGS = -10V, L = 0.5mH

4. Guaranteed by design, not subject to production

MTM1132A: April 2023 [2.0]

www.gmesemi.com

123 4 5

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