Datasheet > BL4435-S8

BL4435-S8

更新时间： 2024-04-09 19:01:42

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	625K
描述
9A, 30V, 3.1W, P Channel, Power MOSFETs

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BL4435-S8 数据手册

P-Channel Enhancement Mode MOSFET

BL4435-S8

Features



High density cell design for ultra low R_DS(ON)

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

Mechanical Data



Case: SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOP-8

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

BL4435-S8

4000pcs / Tape & Reel

4435-8

Maximum Ratings (@ T_C= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

-30

±20

-9

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

-50

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJC

T_J

3.1

°C /W

°C

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0240A: November 2022 [1.0]

www.gmesemi.com

12 3 4 5

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