5秒后页面跳转
BL3407E PDF预览

BL3407E

更新时间: 2024-04-09 19:01:52
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 653K
描述
5.3A, 30V, 2W, P Channel, Power MOSFETs

BL3407E 数据手册

 浏览型号BL3407E的Datasheet PDF文件第2页浏览型号BL3407E的Datasheet PDF文件第3页浏览型号BL3407E的Datasheet PDF文件第4页浏览型号BL3407E的Datasheet PDF文件第5页 
P-Channel Enhancement Mode MOSFET  
BL3407E  
Features  
RDS(ON) 52mΩ@ VGS = -10V  
RDS(ON) 87mΩ@ VGS = -4.5V  
High-speed switching  
Drive circuits can be simple  
Parallel use is easy  
JESD22-A114-B ESD rating of class 0 per human body model  
Typical Applications  
Power Management in Note Book  
Switching Application  
Battery Powered System  
Load switch  
Mechanical Data  
Case: SOT-89  
Molding Compound, UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208  
SOT-89  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BL3407E  
SOT-89  
1000 pcs / Tape & Reel  
3407  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-30  
V
V
Gate -Source Voltage  
±20  
TA = 25°C  
TA = 70°C  
-5.3  
A
Continuous Drain Current  
ID  
-4.2  
A
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
IDM  
-20  
A
Single Pulse Avalanche Energy *3  
EAS  
12  
mJ  
W
W
°C  
°C  
TA = 25°C  
TC = 25°C  
2
Power Dissipation  
PD  
4
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
MTM0023A: May 2023 [2.5]  
www.gmesemi.com  
1

与BL3407E相关器件

型号 品牌 描述 获取价格 数据表
BL3407-S8 Galaxy Microelectronics 5.5A, 30V, 2.5W, P Channel, Power MOSFETs

获取价格

BL34118 BELLING Voice Switched Speakerphone Circuit

获取价格

BL3415 Galaxy Microelectronics -20V, P Channel MOSFETs

获取价格

BL3415-3L Galaxy Microelectronics -20V, P Channel MOSFETs

获取价格

BL3415-6L Galaxy Microelectronics 20V, P Channel MOSFETs

获取价格

BL3415DF1 Galaxy Microelectronics 20V, P Channel MOSFETs

获取价格