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BL350P04-S8 PDF预览

BL350P04-S8

更新时间: 2024-11-25 17:01:07
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 411K
描述
-40V, P Channel MOSFETs

BL350P04-S8 数据手册

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P-Channel Enhancement Mode MOSFET  
BL350P04-S8  
Features  
Advanced Trench technology  
Excellent RDS(ON) and low gate charge  
HBM: JESD22-A114-B: 1A  
Typical Applications  
PWM applications  
Power management functions  
Load switch  
Mechanical Data  
Case: SOP-8  
Molding Compound, UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208  
SOP-8  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BL350P04-S8  
SOP-8  
4000 pcs / Tape & Reel  
350P04  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-40  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 100°C) *1  
Pulsed Drain Current *1  
-6.6  
A
ID  
-4.2  
A
IDM  
EAS  
PD  
-26  
A
Single Pulse Avalanche Energy *3  
Power Dissipation (TA = 25°C) *1  
Operating Junction Temperature Range  
Storage Temperature Range  
20  
mJ  
W
°C  
°C  
2.5  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Air *1  
RθJA  
-
-
50  
°C /W  
MTM1467A: November 2023 [P]  
www.gmesemi.com  
1

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