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BL350N04 PDF预览

BL350N04

更新时间: 2024-04-09 19:01:14
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 554K
描述
40V, N Channel MOSFETs

BL350N04 数据手册

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N-Channel Enhancement Mode MOSFET  
BL350N04  
Features  
Advanced trench technology MOSFETs  
Low gate charge  
Excellent RDS(ON)  
Applications  
PWM  
Load switch  
Mechanical Data  
Case: SOT-23  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
SOT-23  
Ordering Information  
Part Number  
Package  
SOT-23  
Shipping Quantity  
Marking Code  
BL350N04  
3000 pcs / Tape & Reel  
350N04  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 70°C) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
6.3  
A
ID  
5
A
4
A
IDM  
40  
6
A
EAS  
mJ  
W
W
°C  
°C  
2.5  
PD  
Power Dissipation (TA = 25°C) *1  
1.6  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
MTM0977A: August 2023 [2.0]  
www.gmesemi.com  
1

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