Datasheet > BL12N65

BL12N65

更新时间： 2024-04-09 18:58:52

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	208K
描述
12A, 650V, 90W, N Channel,Power MOSFETs

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BL12N65 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor

BL12N65

FEATURES



DPAK Worldwide Best R_DS(on)

High dv/dt Capability.

Excellent Switching Performace.

Easy to Drive.

100% Avalanche Tested.

APPLICATIONS



N-channel Enhancement mode Effect Transistor.



Switching Applications.

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL12N65

TO-220AB

50pcs / Tube

12N65

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

Gate -Source Voltage

650

±25

V_GS

I_D

Maximum Drain Current(continuous) at T_C=25℃

T_C=100℃

7.3

Drain Current(pulsed)Note1

I_DM

P_D

I_AR

Power Dissipation at T_C=25℃

Avalavche Current,Repetitive or Not-repetitive

Single Pulse Avalanche Energy

(starting T_j=25℃,I_D=I_AR,V_DD=50V)

E_AS

200

Peak Diode Recovery Voltage Slope(Note2)

Thermal Resistance,Junction-to-Ambient

dv/dt

R_θJA

62.5

V/ns

℃/W

℃

Operating Junction and StorageTem-perature Range

T_jT_stg

-55 to +150

Note: 1. Pulse width limited by safe operating area

2. I_SO≤12A, di/dt≤400A/us, V_Peak<V_(BR)DSS

MTM0310A

www.gmesemi.com

12 3

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