Datasheet > BL12N65B

BL12N65B

更新时间： 2024-04-09 19:02:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	230K
描述
12A, 650V, 90W, N Channel, Power MOSFETs

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL12N65B 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor BL12N65B

FEATURES



High dv/dt capability

Excellent switching performace

Easy to drive

100% avalanche tested

APPLICATIONS



N-channel Enhancement mode Effect Transistor



Switching Applications

TO-263

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

650

Gate -Source Voltage

V_GS

Maximum Drain Current(continuous) at T_C=25℃

T_C=100℃

I_D

7.3

Drain Current(pulsed)Note1

I_DM

P_D

Power Dissipation at T_C=25℃

Avalavche Current,Repetitive or Not-repetitive

I_AR

200

Single Pulse Avalanche Energy

(starting T_j=25℃,I_D=I_AR,V_DD=50V)

E_AS

V/ns

℃/W

℃

Peak Diode Recovery Voltage Slope(Note2)

Thermal Resistance,Junction-to-Ambient

dv/dt

R_θJA

T_jT_stg

62.5

Operating Junction and StorageTem-perature Range

-55 to +150

Note: 1. Pulse width limited by safe operating area

2. I_SO≤12A,di/dt≤400A/us,V_Peak<V_(BR)DSS

MTM0847A: February 2018

www.gmesemi.com

12 3

下载PDF

与BL12N65B相关器件

型号	品牌	描述	获取价格	数据表
BL12N65F	Galaxy Microelectronics	12A, 650V, 42W, N Channel, Power MOSFETs	获取价格
BL12N70	BELLING	BL12N70, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology	获取价格
BL-12V	JST	用于短路连接的端子被封装在外壳内，以防端子半嵌合或意外脱落，从而增强安全性。*面板锁设计用	获取价格
BL-12VST	JST	用于短路连接的端子被封装在外壳内，以防端子半嵌合或意外脱落，从而增强安全性。*面板锁设计用	获取价格
BL1302A57	BELLING	BL1302A57	获取价格
BL1302A57S	BELLING	BL1302A57	获取价格