Datasheet > BL12N70

BL12N70

更新时间： 2024-11-25 14:55:59

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	1038K
描述
BL12N70, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL12N70 数据手册

BL12N70

Power MOSFET

1．Description

BL12N70, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable device

for SMPS, high speed switching and general

purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

700

Unit

R_DS(ON).Typ

FEATURES

0.58

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS



High frequency switching mode power supply

Electronic ballast



ORDERING INFORMATION

Ordering Codes

BL12N70-P

BL12N70-A

Package

TO-220

TO-220F

Product Code

12N70

Packing

Tube

BL12N70-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL12N70:700V 12A

(2) A:TO-220F P:TO-220

BL12N70

Rev 1.0

4/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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