Datasheet > BL042N10THB

BL042N10THB

更新时间： 2024-11-21 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	685K
描述
120A, 100V, 208W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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BL042N10THB 数据手册

N-Channel Enhancement Mode MOSFET

BL042N10THB

Features



Excellent FOM

Very low on-resistance R_DS(on)

Ideal for high-frequency switching and synchronous rectification

JESD22-A114-B ESD rating of class 1C per human body model

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

BL042N10THB

50 pcs / Tube & 800 pcs / Tape & Reel

042N10THB

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C , Silicon Limited)

Continuous Drain Current (T_C= 25°C, Package Limited)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

160

120

I_D

105

I_DM

E_AS

P_D

480

536

°C

Power Dissipation (T_C= 25°C)

208

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.5

0.6

°C /W

MTM1200A: May 2023 [2.0]

www.gmesemi.com

12 3 4 5

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