Datasheet > BL045N10B

BL045N10B

更新时间： 2024-11-21 17:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	536K
描述
180A, 100V, 284W, N Channel, Power MOSFETs

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BL045N10B 数据手册

N-Channel Enhancement Mode MOSFET

BL045N10B

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL045N10B

TO-263

50pcs / Tube & 800pcs / Tape & Reel

045N10B

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Symbol

V_DSS

V_GSS

I_D

Value

100

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Pulsed Drain Current ^*2

180

I_D

110

I_DM

450

Single Pulse Avalanche Energy ^*3

E_AS

665

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

R_θJL

T_J

284

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature Range

Storage Temperature Range

0.44

0.34

-55 ~ +150

T_STG

°C

MTM0223A: March 2020

www.gmesemi.com

12 3 4 5

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