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BL04N06E PDF预览

BL04N06E

更新时间: 2024-11-25 17:00:51
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 546K
描述
4A, 60V, 1.5W, N Channel, Power MOSFETs

BL04N06E 数据手册

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N-Channel Enhancement Mode MOSFET  
BL04N06E  
Features  
Low on resistance  
Low on threshold voltage  
Fast switching speed  
Low gate drive  
Typical Applications  
Motor control  
Power switches  
DC-DC converters  
Power management functions  
Mechanical Data  
Case: SOT-89  
SOT-89  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BL04N06E  
SOT-89  
1000 pcs / Tape & Reel  
04N06  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
60  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C )  
Continuous Drain Current (TC = 100°C )  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 100°C ) *1  
Pulsed Drain Current (tp =10μs, TC = 25°C )  
Power Dissipation (TA = 25°C ) *1  
4
2.5  
A
A
ID  
2.7  
A
1.7  
A
IDM  
PD  
20  
A
1.5  
W
°C  
°C  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
-
-
35  
83  
°C /W  
°C /W  
MTM0244A: March 2024 [2.1]  
www.gmesemi.com  
1

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