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BL050N10TH PDF预览

BL050N10TH

更新时间: 2024-04-09 19:03:21
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 576K
描述
100V, N Channel MOSFETs

BL050N10TH 数据手册

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N-Channel Enhancement Mode MOSFET  
BL050N10TH  
Features  
Super low gate charge  
Green device available  
Excellent cdV / dt effect decline  
Advanced high cell density trench technology  
Mechanical Data  
Case: TO-220AB  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
TO-220AB  
Ordering Information  
Part Number  
Package  
TO-220AB  
Shipping Quantity  
Marking Code  
BL050N10TH  
50 pcs / Tube  
050N10TH  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
100  
±20  
190  
125  
450  
V
V
A
A
A
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C) *1  
Continuous Drain Current (TC = 100°C) *1  
Pulsed Drain Current *2  
ID  
IDM  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C)  
PD  
RθJA  
RθJC  
TJ  
284  
50  
W
°C/W  
°C/W  
°C  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Operating Junction Temperature Range  
Storage Temperature Range  
0.44  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0500A: August 2021  
www.gmesemi.com  
1

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