Datasheet > BL046N04T-5DL8

BL046N04T-5DL8

更新时间： 2024-11-21 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	1068K
描述
74A, 40V, 42W, N Channel, Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL046N04T-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL046N04T-5DL8

Features



Low thermal resistance



Advanced high cell density trench technology

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

BL046N04T-5DL8

5000 pcs / Tape & Reel

046N04T

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (V_GS= 10V, T_C= 25°C ) ^*1

Continuous Drain Current (V_GS= 10V, T_C= 100°C) ^*1

Pulsed Drain Current(V_GS= 10V, T_C= 25°C) ^{*1, 2, 3}

Single Pulse Avalanche Energy(V_DD= 30V, L = 1mH)

I_D

I_DM

390

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

R_θJA

T_J

°C /W

°C

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0803A: September 2022 [2.1]

www.gmesemi.com

12 3 4 5

中文翻译

下载PDF

与BL046N04T-5DL8相关器件

型号	品牌	获取价格	描述	数据表
BL047N03-5DL8	BL Galaxy Electrical	获取价格	78A, 30V, 50W, N Channel, Power MOSFETs
BL04L-W3F-865	OSRAM	获取价格	BACKlight 2G
BL04N06D	BL Galaxy Electrical	获取价格	4A, 60V, 15W, N Channel, Power MOSFETs
BL04N06E	BL Galaxy Electrical	获取价格	4A, 60V, 1.5W, N Channel, Power MOSFETs
BL04N06R	BL Galaxy Electrical	获取价格	4A, 60V, 3.1W, N Channel, Power MOSFETs
BL04S-B1	OSRAM	获取价格	BACKlight 2G
BL04S-T2	OSRAM	获取价格	BACKlight 2G
BL04S-W2-854	OSRAM	获取价格	BACKlight 2G
BL04S-W2-865	OSRAM	获取价格	BACKlight 2G
BL05	AIMTRON	获取价格	High-Side Power Switch IC