Datasheet > BL043N03-5DL8

BL043N03-5DL8

更新时间： 2024-11-21 17:01:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	1100K
描述
100A, 30V, 68W, N Channel, Power MOSFETs

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数据手册

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BL043N03-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL043N03-5DL8

Features



Excellent gate charge x R_DS(on)product(FOM)

Very low on-resistance R_DS(on)

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL043N03-5DL8

PDFN5×6-8L

5000 pcs / Tape & Reel

043N03

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

±20

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

100

I_DM

400

Single Pulse Avalanche Energy ^*2

Power Dissipation

E_AS

P_D

200

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

1.8

Unit

Thermal Resistance Junction-to-Case

R_θJC

°C /W

MTM1244A: June 2023 [1.0]

www.gmesemi.com

12 3 4 5

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