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BL03N10T PDF预览

BL03N10T

更新时间: 2024-11-21 17:00:59
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 521K
描述
3A,100V, 1.4W, N Channel, Power MOSFETs

BL03N10T 数据手册

 浏览型号BL03N10T的Datasheet PDF文件第2页浏览型号BL03N10T的Datasheet PDF文件第3页浏览型号BL03N10T的Datasheet PDF文件第4页浏览型号BL03N10T的Datasheet PDF文件第5页浏览型号BL03N10T的Datasheet PDF文件第6页 
N-Channel Enhancement Mode MOSFET  
BL03N10T BL03N10T-3L  
Features  
Low RDS(ON) & FOM  
Extremely low switching loss  
Excellent stability and uniformity  
BL03N10T  
SOT-23  
BL03N10T-3L  
SOT-23-3L  
Mechanical Data  
Case: SOT-23, SOT-23-3L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
Ordering Information  
Part Number  
BL03N10T  
Package  
Shipping Quantity  
Marking Code  
03N10T  
SOT-23  
3000 pcs / Tape & Reel  
3000 pcs / Tape & Reel  
BL03N10T-3L  
SOT-23-3L  
03N10T  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
ID  
100  
±20  
3
V
V
A
A
Gate-to-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
IDM  
20  
Thermal Characteristics (@ TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TA = 25°C)  
PD  
RθJA  
TJ  
1.4  
W
°C /W  
°C  
Thermal Resistance Junction-to-Air *1  
Operating Junction Temperature Range  
Storage Temperature Range  
90  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM1252A: November 2023 [1.1]  
www.gmesemi.com  
1

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