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BL042N04D PDF预览

BL042N04D

更新时间: 2024-04-09 19:02:34
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 451K
描述
104A, 40V, 78W, N Channel, Power MOSFETs

BL042N04D 数据手册

 浏览型号BL042N04D的Datasheet PDF文件第2页浏览型号BL042N04D的Datasheet PDF文件第3页浏览型号BL042N04D的Datasheet PDF文件第4页 
N-Channel Enhancement Mode MOSFET  
BL042N04D  
Features  
Super low gate charge  
Green device available  
Excellent CdV / dt effect decline  
Advanced high cell density trench technology  
Mechanical Data  
Case: TO-252  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
TO-252  
Ordering Information  
Part Number  
Package  
TO-252  
Shipping Quantity  
Marking Code  
BL042N04D  
80 pcs / Tube & 2500 pcs / Tape & Reel  
042N04D  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
±20  
104  
66  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C ) *1  
Continuous Drain Current (TC = 100°C) *1  
Pulsed Drain Current *2  
A
ID  
A
IDM  
330  
400  
A
Single Pulse Avalanche Energy *3  
EAS  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C) *1,4  
Thermal Resistance Junction-to-Case *1  
Operating Junction Temperature Range  
Storage Temperature Range  
PD  
RθJC  
TJ  
78  
W
°C /W  
°C  
1.6  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0799A: May 2021  
www.gmesemi.com  
1

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