Datasheet > BL042N085TH

BL042N085TH

更新时间： 2024-04-09 18:58:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	599K
描述
210A, 85V, 305W, N Channel, Power MOSFETs

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BL042N085TH 数据手册

N-Channel Enhancement Mode MOSFET

BL042N085TH

Key performance parameters

Features



N-channel, normal level

Parameter

V_DS

Value

Unit

Excellent FOM

Very low on-resistance R_DS(on)

Ideal for high-frequency switching and synchronous

rectification

R_DS(on)，max@10V

Q_{g. typ}@10V

4.2

mΩ



Pb-free lead plating; RoHS compliant

Mechanical Data



Case: TO-220AB



Molding Compound: UL Flammability Classification Rating

94V-0



Terminals: Matte tin-plated leads; solderability-per MIL-STD-

202, Method 208

TO-220AB

Ordering Information

Part Number

Package

TO-220AB

Shipping Quantity

50 pcs / Tube

Marking Code

BL042N085TH

042N085TH

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_DSS

V_GSS

±20

210

133

548

560

Continuous Drain Current (T_C= 25°C, Silicon limited)

Continuous Drain Current (T_C= 100°C, Silicon limited)

Pulsed Drain Current ^*1

I_D

I_DM

Single Pulse Avalanche Energy ^*4

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

305

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

°C /W

0.41

-55 ~ +150

°C

T_STG

MTM0580A: December 2021

www.gmesemi.com

12 3 4 5

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