5秒后页面跳转
BGU8823/A PDF预览

BGU8823/A

更新时间: 2022-06-24 15:43:22
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
42页 577K
描述
Dual channel low-noise high linearity amplifier with DSA and SPDT

BGU8823/A 数据手册

 浏览型号BGU8823/A的Datasheet PDF文件第2页浏览型号BGU8823/A的Datasheet PDF文件第3页浏览型号BGU8823/A的Datasheet PDF文件第4页浏览型号BGU8823/A的Datasheet PDF文件第6页浏览型号BGU8823/A的Datasheet PDF文件第7页浏览型号BGU8823/A的Datasheet PDF文件第8页 
NXP Semiconductors  
BGU8823/A  
Dual channel low-noise high linearity amplifier with DSA and SPDT  
Symbol  
Pin  
Description  
RFIN_D  
11  
RF Input to LNA1, diversity channel. An external DC block is required.  
External SMD is required for matching.  
VDD1_D  
13  
15  
Supply to LNA1, diversity channel. Decoupling capacitors are required  
LNA1OUT_D  
RF output of LNA1, diversity channel. An external DC block + BIAS  
choke are required.  
DSAIN_D  
LNA2OUT_D  
VDD2_D  
18  
21  
22  
RF input to DSA, diversity channel. An external DC block + matching  
SMD are required.  
RF output of LNA2, diversity channel. An external DC block + BIAS  
choke are required.  
Supply to LNA2, diversity channel. Decoupling capacitors are required.  
GPO/DSA_0_X dB Diversity 23  
GPO (General Purpose Output). Leave open when not used.  
Direct-access DSA setting between minimum attenuation and X dB  
attenuation programmed prior to TDD mode diversity channel  
GND/Disable Diversity  
Channel  
24  
Ground or Disable Diversity Channel  
SW_RF1  
25  
28  
31  
32  
33  
34  
35  
36  
Switch RF path 1. An external DC block is required  
Switch RF common. An external DC block is required  
Switch RF path 2. An external DC block is required  
Ground or Disable Main Channel  
SW_RFC  
SW_RF2  
GND/Disable Main Channel  
VDD_SPDT  
VDD_SPI  
VDD into SPDT, decoupling capacitors are required  
VDD into SPI, decoupling capacitors are required  
Supply to LNA2, main channel. Decoupling capacitors are required  
VDD2_M  
LNA2OUT_M  
RF output of LNA2, main channel. An external DC block + BIAS choke  
are required.  
DSAIN_M  
39  
42  
44  
RF input to DSA, main channel. An external DC block + matching SMD  
are required.  
LNA1OUT_M  
RF output from LNA1, main channel. An external DC block + BIAS  
choke are required.  
VDD1_M  
GND  
Supply to LNA2, diversity channel. Decoupling capacitors are required.  
Exposed die pad  
Ground  
BGU8823/A  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2020. All rights reserved.  
Product data sheet  
Rev. 6 — 15 April 2020  
5 / 42  

与BGU8823/A相关器件

型号 品牌 描述 获取价格 数据表
BGU8823/AY NXP Dual channel low-noise high linearity amplifier with DSA and SPDT

获取价格

BGU8823A NXP Dual channel low-noise high linearity amplifier with DSA and SPDT

获取价格

BGU8H1 NXP SiGe:C Low Noise Amplifier MMIC for LTE

获取价格

BGU8L1 NXP SiGe:C Low Noise Amplifier MMIC for LTE

获取价格

BGU8M1 NXP SiGe:C Low Noise Amplifier MMIC for LTE

获取价格

BGV503 ETC ?Negative Voltage Generator IC. Vout = -2.1 ... -5 V. Iout.max = 5 mA. TSSOP-10 ?

获取价格