Datasheet > BGU8823/A

BGU8823/A

更新时间： 2022-06-24 15:43:22

品牌	Logo	应用领域
恩智浦 - NXP		光电二极管
页数	文件大小	规格书
42页	577K
描述
Dual channel low-noise high linearity amplifier with DSA and SPDT

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BGU8823/A 数据手册

NXP Semiconductors

BGU8823/A

Dual channel low-noise high linearity amplifier with DSA and SPDT

4 Quick reference data

Table 1.ꢀQuick reference data BGU8823/A LNA1

f = 2550 MHz; V_CC= 5 V; T_amb= 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured

in an application board as shown in Figure 44 with components listed in Table 35 optimized for f = 2550 MHz.

Symbol

Parameter

Conditions

LNA1 enable

Disable

Min Typ Max Unit

I_CC

supply current

[1]

G_p

power gain

noise figure

0.7

P_L(1dB)

output power at 1 dB gain

compression

16.1 19

dBm

[1]

IP3_O

output third-order intercept point

2-tone; tone spacing = 1 MHz;

P_i= -15 dBm per tone

33.5 36

dBm

[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded for all RF parameters.

Table 2.ꢀQuick reference data BGU8823/A DSA+LNA2

f = 2550 MHz; V_CC= 5 V; T_amb= 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured

in an application board as shown in Figure 44 with components listed in Table 35 optimized for f = 2550 MHz

Symbol

Parameter

Conditions

LNA2 enable

Disable

Min Typ Max Unit

I_CC

supply current

[1]

G_p

power gain

noise figure

14.1 17

2.7

P_L(1dB)

output power at 1 dB gain

compression

16.1 20

dBm

[1]

IP3_O

output third-order intercept point

2-tone; tone spacing = 1 MHz;

P_i= -15 dBm per tone

33.5 36

dBm

[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded for all RF parameters.

Table 3.ꢀQuick reference data BGU8823/A SPDT

f = 2550 MHz; V_CC= 5 V; T_amb= 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured

in an application board as shown in Figure 44 with components listed in Table 35 optimized for f = 2550 MHz

Symbol

I_CC

Parameter

Conditions

Min Typ Max Unit

supply current

2.1

[1]

α_ins

insertion loss

1.9 2.2 dB

RL_in

input return loss

all SPDT pins

P_i(1dB)

IP3_i

input power at 1 dB gain compression

input third-order intercept point

dBm

2-tone; tone spacing = 1 MHz;

P_i= +5 dBm per tone

[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded for all RF parameters.

BGU8823/A

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 6 — 15 April 2020

2 / 42

123 4 5 6 7...42

下载PDF

与BGU8823/A相关器件

型号	品牌	描述	获取价格	数据表
BGU8823/AY	NXP	Dual channel low-noise high linearity amplifier with DSA and SPDT	获取价格
BGU8823A	NXP	Dual channel low-noise high linearity amplifier with DSA and SPDT	获取价格
BGU8H1	NXP	SiGe:C Low Noise Amplifier MMIC for LTE	获取价格
BGU8L1	NXP	SiGe:C Low Noise Amplifier MMIC for LTE	获取价格
BGU8M1	NXP	SiGe:C Low Noise Amplifier MMIC for LTE	获取价格
BGV503	ETC	?Negative Voltage Generator IC. Vout = -2.1 ... -5 V. Iout.max = 5 mA. TSSOP-10 ?	获取价格