Datasheet > BGA9U1MN9

BGA9U1MN9

更新时间： 2024-04-09 19:01:18

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
20页	646K
描述
4G/5G MIPI LNA and LNA Bank

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数据手册

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BGA9U1MN9 数据手册

BGA9U1MN9

5-7.2 GHz Low Noise Amplifier with Gain Steps and MIPI Control

RF Characteristics

4 DC Characteristics

Table 3: DC Characteristics at T_A= 25 ^◦C

Parameter ¹

Symbol

Values

Unit

Note / Test Condition

Min.

1.1

Typ.

1.8

4.5

3.5

Max.

2.0

Supply Voltage

Supply Current

V_DD

I_DD

–

3.0

2.5

–

6.0

4.5

µA

G0/G1 mode in Bias4

G2-G5 mode in Bias2

Bypass mode (all bias)

RFFE supply voltage

V_IO

V_IH

V_IL

1.65

1.8

–

1.95

V_IO

–

RFFE input high voltage²

RFFE input low voltage²

RFFE output high voltage³

RFFE output low voltage³

0.7 * V_IO

Logical "1"

–

0.3 * V_IO

V_IO

Logical "0"

V_OH

V_OL

0.8 * V_IO

–

0.2 * V_IO

–

RFFE control input capacitance C_Ctrl

RFFE supply current I_VIO

–

µA

–

Idle State

¹Based on the application described in Chapter 7

²SCLK, SDATA and USID

³SDATA

5 RF Characteristics

Table 4: RF Characteristics in ON Mode at T_A= 25 ^◦C, V_DD= 1.8 V, f = 5.15 – 5.925 GHz, performance guaranteed in bias

modes as in Table 3

Parameter

Symbol

Values

Typ.

19.4

16.6

13.7

10.8

7.4

-0.4

-4.4

1.2

Unit

Note / Test Condition

Min.

17.9

15.1

12.2

9.3

5.9

-1.9

-5.4

–

Max.

20.9

18.1

15.2

12.3

8.9

1.1

-3.4

1.8

2.0

2.1

2.4

11.7

5.4

Insertion power gain

f = 5500 MHz

1/|S₂₁|

1.2

1.35

1.45

1.8

10.7

4.4

Noise Figure

f = 5500 MHz

–

Continued on next page

Datasheet

Revision 2.0

2021-09-15

1 2 3 456 7 8...20

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