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BFY181_11 PDF预览

BFY181_11

更新时间: 2024-11-20 12:50:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管射频
页数 文件大小 规格书
4页 148K
描述
HiRel NPN Silicon RF Transistor

BFY181_11 数据手册

 浏览型号BFY181_11的Datasheet PDF文件第2页浏览型号BFY181_11的Datasheet PDF文件第3页浏览型号BFY181_11的Datasheet PDF文件第4页 
BFY181  
HiRel NPN Silicon RF Transistor  
4
1
3
HiRel Discrete and Microwave Semiconductor  
For low noise, high-gain broadband amplifiers at collector  
currents from 0,5 mA to 12 mA.  
Hermetically sealed microwave package  
2
fT= 8 GHz  
F = 2.2 dB at 2 GHz  
Space Qualified  
ESA/SCC Detail Spec. No.: 5611/006  
Type Variant No. 03  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking Ordering Code  
see below  
Pin Configuration Package  
BFY181 (ql)  
-
C
E
B
E
Micro-X1  
(ql) Quality Level:  
P: Professional Quality  
H: High Rel Quality  
S: Space Quality  
ES: ESA Space Quality  
(see order instructions for ordering example)  
IFAG IMM RPD D HIR  
1 of 4  
V 2, February 2011  

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