Datasheet > BFY193_11

BFY193_11

更新时间： 2024-11-05 12:50:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管射频
页数	文件大小	规格书
4页	149K
描述
HiRel NPN Silicon RF Transistor

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BFY193_11 数据手册

BFY193

HiRel NPN Silicon RF Transistor

 HiRel Discrete and Microwave Semiconductor

 For low noise, high-gain amplifiers up to 2GHz.

 For linear broadband amplifiers

 Hermetically sealed microwave package

 f_T= 8 GHz

F = 2.3 dB at 2 GHz



Space Qualified

ESA/SCC Detail Spec. No.: 5611/006

Type Variant No. 06

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Ordering Code

Pin Configuration

Package

BFY193 (ql)

(ql) Quality Level:

see below

Micro-X1

P: Professional Quality

H: High Rel Quality

S: Space Quality

ES: ESA Space Quality

(see order instructions for ordering example)

IFAG IMM RPD D HIR

1 of 4

V2, February 2011

12 3 4

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型号	品牌	获取价格	描述	数据表
BFY193C	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, HERMETIC
BFY193C (ES)	INFINEON	获取价格	高可靠性微波晶体管
BFY193C (P)	INFINEON	获取价格	高可靠性微波晶体管
BFY193C(ES)	INFINEON	获取价格	RF Small Signal Bipolar Transistor,
BFY193C(H)	INFINEON	获取价格	暂无描述
BFY193C(P)	INFINEON	获取价格	RF Small Signal Bipolar Transistor,
BFY193C(S)	INFINEON	获取价格	Transistor
BFY193CESZZZA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor
BFY193CPZZZA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor
BFY193CSTR	INFINEON	获取价格	RF Small Signal Bipolar Transistor,