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BFY182 (P) PDF预览

BFY182 (P)

更新时间: 2024-11-21 14:56:19
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英飞凌 - INFINEON /
页数 文件大小 规格书
6页 387K
描述
HiRel Microwave Transistor

BFY182 (P) 数据手册

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BFY182  
HiRel NPN Silicon RF Transistor  
BFY182(ES)  
4
1
3
2
Features  
For low noise, high-gain broadband amplifiers  
at collector currents from 1 mA to 20 mA  
Hermetically sealed microwave package  
fT= 8GHz  
F = 2.4 dB at 2 GHz  
Product validation  
Space Qualified  
ESCC Detail Spec. No.: 5611/006  
Type Variant No. 04  
Description  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Table 1  
Type  
Product information  
Comment  
Pin Configuration  
Package  
1
2
3
4
BFY182(ES)  
BFY182(P)1  
For flight use  
Not for flight use1  
C
E
B
E
Micro-X1  
1 (P) parts have the same fit, form and function as (ES) parts,  
no screening acc. to Chart F3 in ESCC Generic Specification No. 5010  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
1 of 6  
IFAG PSS RFS D2 HIR  
Issue 5, January 2022  
 
 
 

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