5秒后页面跳转
BFS17H PDF预览

BFS17H

更新时间: 2024-09-26 20:14:59
品牌 Logo 应用领域
美台 - DIODES 放大器光电二极管晶体管
页数 文件大小 规格书
2页 44K
描述
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

BFS17H 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.01最大集电极电流 (IC):0.025 A
基于收集器的最大容量:1.5 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):70
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1300 MHz
Base Number Matches:1

BFS17H 数据手册

 浏览型号BFS17H的Datasheet PDF文件第2页 
BFS17L  
BFS17H  
SOT23 NPN SILICON PLANAR  
RF TRANSISTORS  
ISSUE 4 – MARCH 2001  
E
C
PARTMARKING DETAILS —  
BFS17L - E1L  
BFS17H - E1H  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
25  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
V
2.5  
50  
V
Peak Pulse Current  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
25  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector Cut-Off  
Current  
ICBO  
10  
10  
nA  
µA  
VCB=10V, IE=0  
CB=10V, IE=0,  
Tamb = 100°C  
V
Static Forward Current hFE  
Transfer Ratio  
BFS17L  
BFS17H  
25  
70  
20  
100  
200  
125  
IC=2.0mA, VCE=1.0V  
IC=2.0mA, VCE=1.0V  
IC=25mA, VCE=1.0V  
Transition  
Frequency  
fT  
1.0  
1.3  
GHz  
GHz  
IC=2.0mA, VCE=5.0V  
f=500MHz  
IC=25mA, VCE=5.0V  
f=500MHz  
Feedback Capacitance  
Output Capacitance  
Input Capacitance  
Noise Figure  
-Cre  
Cobo  
Cibo  
N
0.85  
pF  
pF  
pF  
dB  
IC=2.0mA, VCE=5V, f=1MHz  
VCB=10V, f=1MHz  
1.5  
2.0  
VEB=0.5V, f=1MHz  
4.5  
-45  
IC=2.0mA, VCE=5.0V  
RS=50, f=500MHz  
Intermodulation  
Distortion  
dim  
dB  
IC=10mA, VCE=6.0V  
RL=37.5,Tamb=25°C  
Vo=100mV at fp=183MHz  
Vo=100mV at fq=200MHz  
measured at f(2q-p)=217MHz  
Spice parameter data is available upon request for this device  
TBA  

与BFS17H相关器件

型号 品牌 获取价格 描述 数据表
BFS17H-E1H DIODES

获取价格

RF Small Signal Bipolar Transistor
BFS17HTC DIODES

获取价格

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Sil
BFS17HTC ZETEX

获取价格

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Sil
BFS17L ZETEX

获取价格

NPN SILICON PLANAR RF TRANSISTORS
BFS17L DIODES

获取价格

SOT23 NPN SILICON PLANAR RF TRANSISTORS
BFS17L MOTOROLA

获取价格

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN
BFS17L-E1L DIODES

获取价格

RF Small Signal Bipolar Transistor
BFS17LT1 MOTOROLA

获取价格

RF TRANSISTOR NPN SILICON
BFS17LT3 MOTOROLA

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 318-07, 3 PIN
BFS17N DIODES

获取价格

NPN RF TRANSISTOR IN SOT-23