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BFS17SE6327 PDF预览

BFS17SE6327

更新时间: 2024-11-21 15:45:51
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
7页 224K
描述
RF Small Signal Bipolar Transistor, 0.025A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN

BFS17SE6327 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.18
Is Samacsys:N最大集电极电流 (IC):0.025 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:15 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.28 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):2500 MHzBase Number Matches:1

BFS17SE6327 数据手册

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BFS17S  
NPN Silicon RF Transistor  
4
5
For broadband amplifiers up to 1 GHz at collector  
6
currents from 1 mA to 20 mA  
3
2
1
C1  
6
E2  
5
B2  
4
VPS05604  
TR2  
TR1  
1
2
3
B1  
E1  
C2  
EHA07196  
Type  
BFS17S  
Marking  
MCs  
Pin Configuration  
1=B1 2=E1 3=C2 4=B2 5=E2 6=C1  
Package  
SOT363  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
V
15  
25  
2.5  
25  
50  
280  
V
CEO  
V
CBO  
V
EBO  
Collector current  
I
mA  
mW  
°C  
C
Peak collector current, f = 10 MHz  
I
CM  
P
Total power dissipation  
tot  
1)  
T 93 °C  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
150  
-65 ... 150  
-65 ... 150  
j
T
A
T
stg  
Thermal Resistance  
Junction - soldering point  
2)  
R
240  
K/W  
thJS  
1
2
T is measured on the collector lead at the soldering point to the pcb  
S
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Mar-21-2005  

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