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BFS17PE6327 PDF预览

BFS17PE6327

更新时间: 2024-10-01 14:50:31
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
7页 511K
描述
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

BFS17PE6327 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:End Of Life零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.37Is Samacsys:N
最大集电极电流 (IC):0.025 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.28 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):2500 MHz
Base Number Matches:1

BFS17PE6327 数据手册

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BFS17P  
NPN Silicon RF Transistor  
For broadband amplifiers up to 1 GHz at  
collector currents from 1 mA to 20 mA  
2
1
3
Pb-free (RoHS compliant) package  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFS17P  
Marking  
MCs  
Pin Configuration  
2 = E 3 = C  
Package  
SOT23  
1 = B  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
15  
25  
2.5  
25  
50  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Peak collector current  
Total power dissipation  
V
V
V
CEO  
CBO  
EBO  
mA  
mW  
°C  
I
C
I
CM  
1)  
280  
P
tot  
T 55 °C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
J
T
A
T
Stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
340  
Unit  
K/W  
2)  
R
thJS  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-07-20  
1

BFS17PE6327 替代型号

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BFS17PE6433 INFINEON

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BFS17P INFINEON

完全替代

NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from

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