BFS17L PDF预览

BFS17L

更新时间: 2025-08-03 22:27:35
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管光电二极管放大器局域网
页数 文件大小 规格书
2页 47K
描述
NPN SILICON PLANAR RF TRANSISTORS

BFS17L 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.01最大集电极电流 (IC):0.025 A
基于收集器的最大容量:1.5 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):25
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1300 MHzBase Number Matches:1

BFS17L 数据手册

 浏览型号BFS17L的Datasheet PDF文件第2页 
BFS17L  
BFS17H  
SOT23 NPN SILICON PLANAR  
RF TRANSISTORS  
ISSUE 4 – MARCH 2001  
E
C
PARTMARKING DETAILS —  
BFS17L - E1L  
BFS17H - E1H  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
25  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
V
2.5  
50  
V
Peak Pulse Current  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
25  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector Cut-Off  
Current  
ICBO  
10  
10  
nA  
µA  
VCB=10V, IE=0  
CB=10V, IE=0,  
Tamb = 100°C  
V
Static Forward Current hFE  
Transfer Ratio  
BFS17L  
BFS17H  
25  
70  
20  
100  
200  
125  
IC=2.0mA, VCE=1.0V  
IC=2.0mA, VCE=1.0V  
IC=25mA, VCE=1.0V  
Transition  
Frequency  
fT  
1.0  
1.3  
GHz  
GHz  
IC=2.0mA, VCE=5.0V  
f=500MHz  
IC=25mA, VCE=5.0V  
f=500MHz  
Feedback Capacitance  
Output Capacitance  
Input Capacitance  
Noise Figure  
-Cre  
Cobo  
Cibo  
N
0.85  
pF  
pF  
pF  
dB  
IC=2.0mA, VCE=5V, f=1MHz  
VCB=10V, f=1MHz  
1.5  
2.0  
VEB=0.5V, f=1MHz  
4.5  
-45  
IC=2.0mA, VCE=5.0V  
RS=50, f=500MHz  
Intermodulation  
Distortion  
dim  
dB  
IC=10mA, VCE=6.0V  
RL=37.5,Tamb=25°C  
Vo=100mV at fp=183MHz  
Vo=100mV at fq=200MHz  
measured at f(2q-p)=217MHz  
Spice parameter data is available upon request for this device  
TBA  

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