5秒后页面跳转
BFS17PQ62702-F940 PDF预览

BFS17PQ62702-F940

更新时间: 2024-11-24 23:35:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
5页 52K
描述
TRANSISTOR UHF BIPOLAR BREITBAND

BFS17PQ62702-F940 数据手册

 浏览型号BFS17PQ62702-F940的Datasheet PDF文件第2页浏览型号BFS17PQ62702-F940的Datasheet PDF文件第3页浏览型号BFS17PQ62702-F940的Datasheet PDF文件第4页浏览型号BFS17PQ62702-F940的Datasheet PDF文件第5页 
BFS 17P  
NPN Silicon RF Transistor  
• For broadband amplifiers up to 1GHz at collector  
currents from 1mA to 20mA  
• CECC-type available: CECC 50002/248.  
Type  
Marking Ordering Code  
MCs Q62702-F940  
Pin Configuration  
1 = B 2 = E  
Package  
BFS 17P  
3 = C  
SOT-23  
Maximum Ratings of any single Transistor  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
15  
25  
2.5  
25  
V
CEO  
CBO  
EBO  
I
I
mA  
C
Peak collector current  
f 10 MHz  
CM  
50  
Total power dissipation  
P
mW  
°C  
tot  
T
55 °C  
280  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
340  
K/W  
thJS  
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm  
Semiconductor Group  
1
Aug-02-1996  

与BFS17PQ62702-F940相关器件

型号 品牌 获取价格 描述 数据表
BFS17R VISHAY

获取价格

Silicon NPN Planar RF Transistor
BFS17S INFINEON

获取价格

NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from
BFS17S_07 INFINEON

获取价格

NPN Silicon RF Transistor
BFS17SE6327 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.025A I(C), 2-Element, Ultra High Frequency Band, Sil
BFS17SE6327HTSA1 INFINEON

获取价格

RF Small Signal Bipolar Transistor,
BFS17S-E6433 INFINEON

获取价格

Transistor
BFS17-T NXP

获取价格

暂无描述
BFS17T/R NXP

获取价格

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP
BFS17T116 ROHM

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
BFS17T117 ROHM

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili