是否无铅: | 含铅 | 生命周期: | End Of Life |
零件包装代码: | SOT-23 | 包装说明: | CASE 318-08, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.18 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 25 V | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 1.5 pF | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFR31LT1G | ONSEMI |
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JFET Amplifiers(N-Channel) | |
BFR31LT1G | ROCHESTER |
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25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, LEAD FREE, CASE 318-08, 3 PIN | |
BFR31LT3 | MOTOROLA |
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25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
BFR31R | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR31R-STYLE-A | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR31R-STYLE-B | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR31R-STYLE-C | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR31R-STYLE-D | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR31R-STYLE-E | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR31R-STYLE-F | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |