Datasheet > BFN20

BFN20

更新时间： 2024-09-28 22:27:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管电视高压
页数	文件大小	规格书
4页	132K
描述
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

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中文翻译

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技术参数
数据手册

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BFN20 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.86
最大集电极电流 (IC)：	0.05 A	配置：	Single
最小直流电流增益 (hFE)：	40	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

BFN20 数据手册

NPN Silicon High-Voltage Transistor

BFN 20

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary type: BFN 21 (PNP)

Package¹⁾

SOT-89

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFN 20

Q62702-F1058

Maximum Ratings

Parameter

Symbol

Values

300

Unit

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage, R^BE= 2.7 kΩ

Emitter-base voltage

Collector current

CE0

CB0

CER

EB0

Peak collector current

100

tot

Total power dissipation, T = 120 ˚C

Junction temperature

150

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 90

≤ 30

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4

中文翻译

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