Datasheet > BFN21

BFN21

更新时间： 2024-09-28 22:27:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管电视高压
页数	文件大小	规格书
4页	132K
描述
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

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数据手册

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BFN21 数据手册

PNP Silicon High-Voltage Transistor

BFN 21

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary type: BFN 20 (NPN)

Package¹⁾

SOT-89

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFN 21

Q62702-F1059

Maximum Ratings

Parameter

Symbol

Values

300

Unit

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage, R^BE= 2.7 kΩ

Emitter-base voltage

Collector current

CE0

CB0

CER

EB0

Peak collector current

100

tot

Total power dissipation, T = 120 ˚C

Junction temperature

150

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 90

≤ 30

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4

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