生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.81 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 15 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 0.3 W |
认证状态: | Not Qualified | 参考标准: | CECC |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2800 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFG17A-T | NXP |
获取价格 |
暂无描述 | |
BFG17AT/R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | SOT-143 | |
BFG17ATRL | YAGEO |
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RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Sil | |
BFG17ATRL | NXP |
获取价格 |
暂无描述 | |
BFG17ATRL13 | NXP |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
BFG19 | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) | |
BFG193 | INFINEON |
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NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broad | |
BFG193 | NJSEMI |
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Trans GP BJT NPN 12V 0.08A Automotive 4-Pin(3+Tab) SOT-223 | |
BFG193E6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN | |
BFG194 | INFINEON |
获取价格 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecomm |