BF961A

更新时间： 2024-11-11 22:27:35

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
7页	161K
描述
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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中文翻译

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技术参数
数据手册

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BF961A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
配置：	Single	最大漏极电流 (Abs) (ID)：	0.03 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	DUAL GATE, DEPLETION MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	FET General Purpose Power
Base Number Matches：	1

BF961A 数据手册

BF961

Vishay Semiconductors

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features

• Integrated gate protection diodes

• High cross modulation performance

• Low noise figure

• High AGC-range

• Low feedback capacitance

• Low input capacitance

Electrostatic sensitive device.

Applications

Input- and mixer stages especially for FM- and VHF

TV-tuners up to 300 MHz.

Observe precautions for handling.

13625

Mechanical Data

Case: TO-50 Plastic case

Weight: approx. 124 mg

Marking: BF961

Pinning:

1 = Drain, 2 = Source,

3 = Gate 1, 4 = Gate 2

Parts Table

Part

Ordering Ccode

BF961A or BF961B

Marking

Package

BF961

TO50

BF961A

BF961B

BF961A

BF961B

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Drain - source voltage

V_DS

I_D

Drain current

Gate 1/Gate 2 - source peak

current

I_G1/G2SM

Total power dissipation

Channel temperature

T_amb≤ 60 °C

P_tot

T_Ch

T_stg

200

150

°C

Storage temperature range

- 55 to + 150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thChA

Value

450

Unit

K/W

Channel ambient

¹⁾on glass fibre printed board (40 x 25 x 1.5) mm³plated with 35 µm Cu

Document Number 85002

Rev. 1.5, 25-Nov-04

www.vishay.com

12 3 4 5 6 7

中文翻译

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与BF961A相关器件

型号	品牌	获取价格	描述	数据表
BF961B	VISHAY	获取价格	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF963	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 50MA I(D) \| SOT-103
BF964	VISHAY	获取价格	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF964S	VISHAY	获取价格	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF964SA	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
BF964SB	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
BF965	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 30MA I(D) \| SOT-103
BF966	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 30MA I(D) \| SOT-103
BF966A	NXP	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal
BF966S	VISHAY	获取价格	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode