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BF569-GS08 PDF预览

BF569-GS08

更新时间: 2024-02-14 14:13:21
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 188K
描述
Transistor

BF569-GS08 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.81
最大集电极电流 (IC):0.03 A配置:Single
最小直流电流增益 (hFE):25最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BF569-GS08 数据手册

 浏览型号BF569-GS08的Datasheet PDF文件第2页浏览型号BF569-GS08的Datasheet PDF文件第3页浏览型号BF569-GS08的Datasheet PDF文件第4页 
BF569 / BF569R  
Vishay Semiconductors  
Silicon PNP Planar RF Transistor  
1
Features  
• High gain  
BF569  
• Low noise  
e3  
2
3
3
2
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
BF569R  
Applications  
For selfoscillating RF mixer stages.  
Electrostatic sensitive device.  
Observe precautions for handling.  
19207  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Typ: BF569R  
Mechanical Data  
Typ: BF569  
Case: SOT-23 Plastic case  
Weight: approx. 8.0 mg  
Case: SOT-23 Plastic case  
Weight: approx. 8.0 mg  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
- VCBO  
Value  
40  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
- VCEO  
- VEBO  
- IC  
35  
V
V
3
30  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 60 °C  
Ptot  
200  
Tj  
150  
Tstg  
- 65 to + 150  
°C  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
450  
Unit  
K/W  
1)  
Junction ambient  
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu  
Electrical DC Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
- ICES  
- ICBO  
Min  
Typ.  
Max  
100  
Unit  
Collector cut-off current  
- VCE = 40 V, VBE = 0  
µA  
Collector-base cut-off current  
Emitter-base cut-off current  
- VCB = 20 V, IE = 0  
- VEB = 2 V, IC = 0  
- IC = 1 mA, IB = 0  
100  
10  
nA  
µA  
V
- IEBO  
Collector-emitter breakdown  
voltage  
- V(BR)CEO  
35  
25  
DC forward current transfer ratio - VCE = 10 V, - IC = 3 mA  
hFE  
50  
90  
Document Number 85000  
Rev. 1.4, 15-Apr-05  
www.vishay.com  
1

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