Datasheet > BF579_08

BF579_08

更新时间： 2024-02-26 13:12:34

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	125K
描述
Silicon PNP Planar RF Transistor

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BF579_08 数据手册

^{Not for new design, this product will be obs}B^oleF^te5^d7^so9^on/ BF579R

Vishay Semiconductors

Silicon PNP Planar RF Transistor

Features

• High transition frequency

• Low distortion

• Lead (Pb)-free component

• Component in accordance to

BF579

BF579R

RoHS 2002/95/EC and WEEE 2002/96/EC

Electrostatic sensitive device.

Applications

Observe precautions for handling.

19212

UHF/VHF uncontrolled prestages with low noise and

low cross modulation.

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BF579R

Mechanical Data

Typ: BF579

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

- V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

- V_CEO

- V_EBO

- I_C

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

200

T_j

150

T_stg

- 55 to + 150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 μm Cu

Electrical DC Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

- I_CES

- I_CBO

Min

Typ.

Max

100

Unit

Collector cut-off current

- V_CE= 20 V, V_BE= 0

μA

Collector-base cut-off current

Emitter-base cut-off current

- V_CB= 15 V, I_E= 0

- V_EB= 3 V, I_C= 0

- I_C= 1 mA, I_B= 0

100

μA

- I_EBO

Collector-emitter breakdown

voltage

- V_(BR)CEO

DC forward current transfer ratio - V_CE= 10 V, - I_C= 10 mA

h_FE

Document Number 85001

Rev. 1.5, 05-Sep-08

www.vishay.com

12 3 4 5

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