BF579

更新时间： 2024-02-14 14:57:41

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	69K
描述
Silicon PNP Planar RF Transistor

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中文翻译

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数据手册

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BF579 数据手册

BF579/BF579R

Vishay Telefunken

Silicon PNP Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

UHF/VHF uncontrolled prestages with low noise and

low cross modulation.

Features

High transition frequency

Low distortion

13 581

94 9280

9510527

BF579 Marking: G7

BF579R Marking: GG

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

–V

CBO

CEO

EBO

–I

amb

≤ 60 C

tot

200

150

–55 to +150

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85001

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

中文翻译

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BF579R	VISHAY	获取价格	Silicon PNP Planar RF Transistor
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BF579-T	NXP	获取价格	TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
BF579TRL	NXP	获取价格	TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
BF579TRL	YAGEO	获取价格	暂无描述
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