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BDW42

更新时间: 2024-11-13 22:27:27
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摩托罗拉 - MOTOROLA 晶体晶体管
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6页 179K
描述
Darlington Complementary Silicon Power Transistors

BDW42 数据手册

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Order this document  
by BDW42/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general purpose and low speed switching applications.  
High DC Current Gain – h = 2500 (typ.) @ I = 5.0 Adc.  
FE C  
Collector Emitter Sustaining Voltage @ 30 mAdc:  
*Motorola Preferred Device  
V
V
= 80 Vdc (min.) — BDW46  
= 100 Vdc (min.) — BDW42/BDW47  
CEO(sus)  
CEO(sus)  
DARLINGTON  
15 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
80100 VOLTS  
85 WATTS  
Low Collector Emitter Saturation Voltage  
V
V
= 2.0 Vdc (max.) @ I = 5.0 Adc  
CE(sat)  
CE(sat)  
C
= 3.0 Vdc (max.) @ I = 10.0 Adc  
C
Monolithic Construction with Built–In Base Emitter Shunt resistors  
TO–220AB Compact Package  
MAXIMUM RATINGS  
BDW42  
BDW47  
Rating  
Symbol  
BDW46  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
V
CEO  
100  
100  
V
CB  
80  
V
EB  
5.0  
15  
I
C
I
B
0.5  
Total Device Dissipation  
P
D
@ T = 25 C  
85  
0.68  
Watts  
W/ C  
C
Derate above 25 C  
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.47  
C/W  
θJC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
25  
50  
75  
100  
125  
150  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power Temperature Derating Curve  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995  

BDW42 替代型号

型号 品牌 替代类型 描述 数据表
TIP3055 STMICROELECTRONICS

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D44H11 STMICROELECTRONICS

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