5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> BDW42G
BDW42G PDF预览

BDW42G

更新时间： 2024-09-29 03:21:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 95K
描述
Darlington Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

BDW42G 数据手册

 浏览型号BDW42G的Datasheet PDF文件第2页浏览型号BDW42G的Datasheet PDF文件第3页浏览型号BDW42G的Datasheet PDF文件第4页浏览型号BDW42G的Datasheet PDF文件第5页浏览型号BDW42G的Datasheet PDF文件第6页浏览型号BDW42G的Datasheet PDF文件第7页 
BDW42 − NPN, BDW46,  
BDW47 − PNP  
BDW42 and BDW47 are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
This series of plastic, medium−power silicon NPN and PNP  
Darlington transistors are designed for general purpose and low speed  
switching applications.  
http://onsemi.com  
Features  
15 AMP DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLT, 85 WATT  
• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.  
• Collector Emitter Sustaining Voltage @ 30 mAdc:  
FE  
C
V
= 80 Vdc (min) − BDW46  
100 Vdc (min) − BDW42/BDW47  
CEO(sus)  
• Low Collector Emitter Saturation Voltage  
MARKING  
DIAGRAM  
V
= 2.0 Vdc (max) @ I = 5.0 Adc  
C
CE(sat)  
3.0 Vdc (max) @ I = 10.0 Adc  
C
• Monolithic Construction with Built−In Base Emitter Shunt resistors  
• TO−220AB Compact Package  
• Pb−Free Packages Are Available*  
4
TO−220AB  
BDWxx  
CASE 221A−09  
AYWWG  
STYLE 1  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
2
3
Collector-Emitter Voltage  
V
CEO  
Vdc  
BDW46  
BDW42, BDW47  
Collector-Base Voltage  
80  
100  
BDWxx = Device Code  
x = 42, 46, or 47  
V
Vdc  
CB  
A
=
=
=
=
Assembly Location  
Year  
BDW46  
BDW42, BDW47  
80  
100  
Y
WW  
G
Work Week  
Pb−Free Package  
Emitter-Base Voltage  
Collector Current  
Base Current  
V
5.0  
15  
Vdc  
Adc  
Adc  
EB  
I
C
I
0.5  
B
ORDERING INFORMATION  
Total Device Dissipation  
P
D
@ T = 25°C  
Derate above 25°C  
85  
0.68  
W
W/°C  
C
Device  
Package  
Shipping  
BDW42  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
BDW42G  
TO−220AB  
(Pb−Free)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BDW46  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
Thermal Resistance,  
Junction−to−Case  
R
1.47  
°C/W  
q
JC  
BDW46G  
TO−220AB  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BDW47  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
BDW47G  
TO−220AB  
(Pb−Free)  
Preferred devices are ON Semiconductor recommended  
choices for future use and best overall value  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
October, 2005 − Rev. 12  
BDW42/D  
1234567

中文翻译

下载PDF

BDW42G 替代型号

型号 品牌 替代类型 描述 数据表
BDW42 ONSEMI

类似代替

 Darlington Complementary Silicon Power Transistors
TIP142T STMICROELECTRONICS

功能相似

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与BDW42G相关器件

型号 品牌 获取价格 描述 数据表
BDW42L MOTOROLA

获取价格

 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42N MOTOROLA

获取价格

 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42S MOTOROLA

获取价格

 		15A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDW42T MOTOROLA

获取价格

 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42U MOTOROLA

获取价格

 		15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDW42U2 MOTOROLA

获取价格

 		15A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDW42UA MOTOROLA

获取价格

 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42W MOTOROLA

获取价格

 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42WD MOTOROLA

获取价格

 		15A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BDW43 MOTOROLA

获取价格

 		DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

与BDW42G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证