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BDW42

更新时间： 2024-09-28 22:27:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 78K
描述
Darlington Complementary Silicon Power Transistors

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中文翻译

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BDW42 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.41
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：15 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：250
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：240极性/信道类型：NPN
最大功率耗散 (Abs)：85 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

BDW42 数据手册

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BDW42* − NPN, BDW46,  
BDW47* − PNP  
Preferred Device  
Darlington Complementary  
Silicon Power Transistors  
This series of plastic, medium−power silicon NPN and PNP  
Darlington transistors are designed for general purpose and low speed  
switching applications.  
http://onsemi.com  
Features  
15 A DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 V, 85 W  
• Pb−Free Package is Available**  
• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.  
• Collector Emitter Sustaining Voltage @ 30 mAdc:  
= 80 Vdc (min) − BDW46  
FE  
C
V
CEO(sus)  
100 Vdc (min.) − BDW42/BDW47  
MARKING  
DIAGRAM  
• Low Collector Emitter Saturation Voltage  
V
CE(sat)  
= 2.0 Vdc (max) @ I = 5.0 Adc  
C
3.0 Vdc (max) @ I = 10.0 Adc  
C
4
• Monolithic Construction with Built−In Base Emitter Shunt resistors  
• TO−220AB Compact Package  
TO−220AB  
CASE 221A  
STYLE 1  
BDWxx  
YYWW  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
2
3
Collector-Emitter Voltage  
V
CEO  
Vdc  
BDW46  
BDW42, BDW47  
Collector-Base Voltage  
80  
100  
xx = 42, 46 or 47  
YY = Year  
WW = Work Week  
V
CB  
Vdc  
BDW46  
BDW42, BDW47  
80  
100  
Emitter-Base Voltage  
Collector Current  
Base Current  
V
5.0  
15  
Vdc  
Adc  
Adc  
EB  
ORDERING INFORMATION  
I
C
I
0.5  
B
†
Device  
Package  
Shipping  
Total Device Dissipation  
P
D
BDW42  
TO−220AB  
50 Units/Rail  
@ T = 25°C  
85  
W
C
Derate above 25°C  
0.68  
W/°C  
BDW46  
BDW47  
BDW47G  
TO−220AB  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
50 Units/Rail  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
TO−220AB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance,  
Junction−to−Case  
Symbol  
Max  
Unit  
*Preferred devices are ON Semiconductor recommended  
choices for future use and best overall value  
R
1.47  
°C/W  
q
JC  
**For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
Publication Order Number:  
June, 2004 − Rev. 11  
BDW42/D  
12345678

中文翻译

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BDW42 替代型号

型号 品牌 替代类型 描述 数据表
BDW42G ONSEMI

类似代替

 Darlington Complementary Silicon Power Transistors
TIP142T STMICROELECTRONICS

功能相似

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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BDW42AF ONSEMI

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